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Product Detailed Parameters
- Description：TRANS NPN 35V 2A TO-126
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：2:00 AM
- Voltage - Collector Emitter Breakdown (Max)：35 V
- Vce Saturation (Max) @ Ib, Ic：800mV @ 150mA, 1.5A
- Current - Collector Cutoff (Max)：1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 500mA, 2V
- Power - Max：1 W
- Frequency - Transition：100MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126
- Grade：-
- Qualification：-
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Overview
The 2SD612KE is an NPN silicon epitaxial planar transistor manufactured by onsemi, housed in a TO-92 (TO-226AA) surface-mount package. It features a collector-emitter breakdown voltage of 80 V and a continuous collector current rating of 0.5 A. The device has a maximum power dissipation of 625 mW at 25°C ambient temperature. It offers a minimum DC current gain (hFE) of 70 at a collector current of 10 mA. The transition frequency is specified at 150 MHz, and it operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- NPN epitaxial planar construction for reliable switching performance
- High breakdown voltage capability suitable for general-purpose applications
- Surface-mount compatible TO-92 package design
Applications
- General-purpose switching circuits
- Low-power amplifier stages
- Driver circuits for small loads
Procurement Notes
Verify the specific suffix 'KE' against the official onsemi datasheet to confirm exact binning or tape-and-reel specifications. Ensure the procurement source provides valid RoHS compliance documentation. Cross-reference the manufacturer part number with authorized distributor catalogs to avoid counterfeit components. Confirm that the TO-92 package variant matches the required PCB footprint for surface-mount assembly.
Selection Notes
Select this component when an NPN transistor with 80 V breakdown and 0.5 A current capacity is required in a compact surface-mount form factor. Consider the 625 mW power dissipation limit and thermal management needs for the application environment. Compare the hFE gain characteristics against circuit requirements for adequate drive capability. Evaluate the transition frequency suitability for the intended signal bandwidth.
Part Context
The 2SD612KE belongs to onsemi's lineup of general-purpose NPN bipolar junction transistors. These devices are designed for low-to-medium power applications requiring reliable switching and amplification. The TO-92 package allows for efficient space utilization in consumer electronics and industrial control boards. This series supports various standard electronic designs needing robust discrete semiconductor solutions.
Replacement Considerations
Consult onsemi documentation for direct replacements. Verify pinout compatibility and electrical parameters such as V(BR)CEO, IC, and Ptot before substituting with other NPN transistors in similar packages.
