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Product Detailed Parameters
- Description：TRANS NPN 15V 0.7A TO-92
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：700 mA
- Voltage - Collector Emitter Breakdown (Max)：15 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：400 @ 150mA, 1V
- Power - Max：500 mW
- Frequency - Transition：250MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92
- Grade：-
- Qualification：-
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Overview
The 2SD655ETZ-E is an NPN silicon epitaxial planar transistor manufactured by Renesas Electronics Corporation. It is housed in a TO-92 package and designed for general-purpose amplification and switching applications. Key electrical parameters include a maximum collector current of 0.7 A, a collector-emitter breakdown voltage of 15 V, and a minimum DC current gain (hFE) of 600. The device supports a maximum power dissipation of 0.5 W and operates within a junction temperature range up to 150 °C.
Feature Summary
- High DC current gain suitable for sensitive signal amplification
- NPN silicon epitaxial planar construction for reliability
- Through-hole TO-92 packaging for standard board mounting
Applications
- General-purpose low-power amplification circuits
- Electronic switching applications
- Audio pre-amplifier stages
Procurement Notes
Verify the specific suffix ETZ-E against official Renesas documentation to confirm pinout orientation and tape-and-reel specifications. Ensure the component meets RoHS compliance requirements if mandated by your design standards. Cross-reference the manufacturer's latest datasheet revision to confirm availability status and any potential obsolescence notices prior to finalizing procurement plans.
Selection Notes
Select this component when a high-gain NPN transistor with moderate current handling is required for through-hole implementations. The 15 V breakdown voltage limits its use to low-voltage logic or analog circuits. Consider thermal management constraints due to the 0.5 W power dissipation rating in enclosed environments compared to surface-mount alternatives.
Part Context
This part belongs to the Renesas discrete semiconductor transistor portfolio, continuing legacy Hitachi designs acquired during corporate restructuring. The 2SD series designation indicates a small-signal bipolar junction transistor intended for consumer electronics and industrial control boards where reliable low-frequency performance is prioritized over high-speed switching characteristics.
Replacement Considerations
Consult official substitution lists for equivalents such as the 2SD655FRR or generic 2N3904 variants if pin compatibility and electrical ratings align. Verify that replacement parts maintain the same hFE minimums and package dimensions to ensure mechanical fit without redesigning the PCB footprint.
