SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MCC 2SD667-C-AP is an NPN silicon epitaxial planar transistor in a TO-92MOD plastic package. It features a collector-emitter breakdown voltage of 80V and a collector-base voltage of 120V. The device supports a continuous collector current of 1.0A with a power dissipation capability of 0.9W. Key electrical parameters include a transition frequency of 140MHz (typical) and a DC current gain range of 100 to 200 for the 'C' rank. Operating junction temperature ranges from -55°C to +150°C.
Verify the specific suffix '-C' corresponds to the required hFE binning (100-200) against design requirements. Confirm RoHS compliance status via the manufacturer's ordering information section, as standard parts may require specific suffixes for halogen-free or lead-free specifications. Ensure authorized sourcing channels are used to mitigate counterfeit risks.
Select this component when an NPN transistor with 80V VCEO and 1A Ic is needed in a through-hole TO-92MOD package. The 'C' ranking provides a guaranteed minimum hFE of 100. Consider thermal management for the 0.9W dissipation limit at elevated ambient temperatures.
The 2SD667 series is a legacy NPN transistor originally developed by Hitachi Semiconductor. Micro Commercial Components (MCC) manufactures the equivalent part under license or specification. The device is designed for general-purpose use in consumer electronics and industrial equipment where moderate power handling and reliable switching are required.
Direct substitutes include the original Hitachi/Renesas 2SD667 and generic equivalents like the 2SC1890A or 2SC2396, provided pinout and electrical ratings match. Verify that alternative packages maintain the same thermal and mechanical constraints.