2SD667-C-AP

2SD667-C-AP

  • Description:TRANS NPN 80V 1A TO-92MOD
  • Series:-

SKU:77b24e23537c Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN 80V 1A TO-92MOD
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 5V
  • Power - Max:900 mW
  • Frequency - Transition:140MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body, Formed Leads
  • Supplier Device Package:TO-92MOD
  • Grade:-
  • Qualification:-

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2SD667-C-AP

Overview

The MCC 2SD667-C-AP is an NPN silicon epitaxial planar transistor in a TO-92MOD plastic package. It features a collector-emitter breakdown voltage of 80V and a collector-base voltage of 120V. The device supports a continuous collector current of 1.0A with a power dissipation capability of 0.9W. Key electrical parameters include a transition frequency of 140MHz (typical) and a DC current gain range of 100 to 200 for the 'C' rank. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

  • NPN silicon epitaxial construction
  • TO-92MOD plastic encapsulation
  • High collector current capability
  • Wide operating temperature range

Applications

  • Low frequency power amplifiers
  • General purpose switching applications
  • Driver circuits requiring high current gain

Procurement Notes

Verify the specific suffix '-C' corresponds to the required hFE binning (100-200) against design requirements. Confirm RoHS compliance status via the manufacturer's ordering information section, as standard parts may require specific suffixes for halogen-free or lead-free specifications. Ensure authorized sourcing channels are used to mitigate counterfeit risks.

Selection Notes

Select this component when an NPN transistor with 80V VCEO and 1A Ic is needed in a through-hole TO-92MOD package. The 'C' ranking provides a guaranteed minimum hFE of 100. Consider thermal management for the 0.9W dissipation limit at elevated ambient temperatures.

Part Context

The 2SD667 series is a legacy NPN transistor originally developed by Hitachi Semiconductor. Micro Commercial Components (MCC) manufactures the equivalent part under license or specification. The device is designed for general-purpose use in consumer electronics and industrial equipment where moderate power handling and reliable switching are required.

Replacement Considerations

Direct substitutes include the original Hitachi/Renesas 2SD667 and generic equivalents like the 2SC1890A or 2SC2396, provided pinout and electrical ratings match. Verify that alternative packages maintain the same thermal and mechanical constraints.

2SD667-C-AP2SD667-C-AP

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