2SD667-D-BP

Overview

The 2SD667-D-BP is an NPN silicon plastic-encapsulated transistor manufactured by Micro Commercial Components. It features a collector-emitter breakdown voltage of 80V and a collector-base breakdown voltage of 120V. The device supports a maximum collector current of 1A and power dissipation of 900mW. The DC current gain (hFE) for the D rank ranges from 160 to 320 at IC=150mA and VCE=5V. Transition frequency is typically 140MHz, with a saturation voltage of 1V at high currents. Operating junction temperature spans -55°C to +150°C.

Feature Summary

• High collector-base breakdown voltage capability up to 120V
• Capable of handling 1.0A continuous collector current
• RoHS compliant lead-free finish
• Moisture sensitivity level 1 classification

Applications

• General-purpose switching applications
• Amplifier circuits requiring moderate gain
• Low-voltage power regulation stages

Procurement Notes

Verify the specific ordering suffix to confirm packaging type and compliance status. The BP suffix indicates bulk packaging containing 50,000 pieces per carton. Ensure procurement channels are authorized distributors to guarantee genuine parts and full traceability. Confirm RoHS compliance requirements match the specific suffix designation before finalizing orders.

Selection Notes

Select this component when a high collector-base voltage rating is required alongside standard NPN switching characteristics. The D rank provides a higher minimum hFE compared to B or C ranks, suitable for low-drive applications. Consider the TO-92MOD package constraints for thermal management in enclosed designs.

Part Context

This part belongs to the 2SD667 series of NPN transistors produced by Micro Commercial Components. The series includes variants with different hFE rankings and voltage ratings, such as the 2SD667A. The device utilizes plastic encapsulation designed for through-hole mounting in standard electronic assemblies.

Replacement Considerations

Direct substitutes include other 2SD667 variants with matching electrical parameters. Verify that replacement parts maintain the same TO-92MOD footprint and pinout configuration. Cross-reference hFE rankings if specific gain thresholds are critical for the circuit design.