SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MCC 2SD667A-D-AP is an NPN silicon plastic-encapsulated transistor in a TO-92MOD package. It features a collector-emitter breakdown voltage of 80Vdc and a collector-base voltage of 120Vdc. The device supports a continuous collector current of 1.0A with a power dissipation capability of 0.9Watts. Transition frequency is typically 140MHz at 150mA, while DC current gain ranges from 100 to 200 for the 'D' rank. Operating junction temperature spans -55°C to +150°C.
Verify component authenticity by purchasing exclusively from Micro Commercial Components or authorized distributors. Counterfeit risks are significant; unauthorized sources lack traceability and warranty coverage. Confirm the specific ordering suffix matches required packaging and compliance standards before finalizing procurement orders.
Select this component when an NPN transistor with 80V collector-emitter voltage and 1A current capacity is required. The TO-92MOD package suits through-hole mounting. Ensure the selected hFE rank meets circuit gain requirements, as the 'D' rank offers a 100 to 200 range. Verify thermal management capabilities align with the 0.9W power dissipation limit under expected operating conditions.
This part belongs to the 2SD667 series of NPN transistors manufactured by Micro Commercial Components. The series includes variants with different breakdown voltages and hFE ranks. The 2SD667A specifically denotes the 80V collector-emitter rating variant within this family of plastic-encapsulated devices designed for general electronic applications.
Direct substitutes include other NPN transistors with matching 80V Vceo, 1A Ic, and TO-92MOD packages. Verify pinout compatibility and electrical parameters such as hFE and fT before substitution. Consult manufacturer datasheets for equivalent parts from other suppliers.