2SD667A-D-BP

Single Bipolar Transistors Overview

The MCC 2SD667A-D-BP is an NPN silicon plastic-encapsulated transistor in a TO-92MOD package. It features a collector-emitter breakdown voltage of 100Vdc and a collector-base breakdown voltage of 120Vdc. The device supports a maximum collector current of 1.0A with a power dissipation capability of 0.9Watts. Electrical characteristics include a DC current gain (hFE) range of 160 to 320 for the 'D' rank, a transition frequency of 140MHz, and a collector-emitter saturation voltage of 1Vdc at specified currents. Operating junction temperature ranges from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• High-voltage capability with a 120V collector-base breakdown voltage
• Capable of handling up to 1.0A collector current
• Designed for high switching speeds using cellular emitter structure
• RoHS compliant and lead-free finish

Single Bipolar Transistors Applications

• General-purpose amplification circuits
• Switching applications requiring high voltage tolerance
• Audio amplifier stages
• Driver circuits for medium-power loads

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix '-BP' corresponds to bulk packaging requirements when sourcing. Confirm that the 'D' suffix indicates the required hFE binning for your circuit design. Ensure compliance with RoHS standards if halogen-free certification is needed, which requires the additional '-HF' suffix. Check authorized distributor lists to avoid counterfeit components.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN transistor with 100V Vceo and 1A Ic is required in a TO-92MOD package. The 'D' ranking provides a higher minimum hFE compared to lower ranks. Consider thermal management as the device dissipates up to 0.9W. Verify that the 140MHz transition frequency meets the signal bandwidth requirements of the application.

Single Bipolar Transistors Part Context

This part belongs to the 2SD667(A) series manufactured by Micro Commercial Components. It is a general-purpose NPN silicon transistor designed for versatile electronic applications. The datasheet covers variants including 2SD667 and 2SD667A, differentiated primarily by their breakdown voltage ratings. The TO-92MOD package allows for through-hole mounting on standard PCBs.

Single Bipolar Transistors Replacement Considerations

Direct substitutes must match the NPN configuration, 100V Vceo, 1A Ic, and TO-92MOD package. Verify hFE binning compatibility if gain consistency is critical. Other manufacturers producing equivalent small-signal transistors with similar electrical profiles may be suitable alternatives.