2SD669-C-BP

Overview

The MCC 2SD669-C-BP is an NPN silicon general-purpose transistor in a TO-92 package. It features a collector-emitter breakdown voltage of 120 V and a maximum collector current of 1.5 A. The device supports up to 1 W power dissipation with an operating junction temperature range from -55°C to +150°C. The 'C' suffix indicates a DC current gain (hFE) rank of 60–120 at IC=150 mA. Electrical characteristics include a transition frequency of 140 MHz typical, collector cutoff current of 10 µA max, and saturation voltages of 1.0 V (VCE) and 1.5 V (VBE).

Feature Summary

• NPN silicon construction with plastic encapsulation for general-purpose switching and amplification.
• Capable of handling 1.5 A collector current and dissipating 1 Watt of power.
• RoHS compliant lead-free finish with UL 94 V-0 flammability rating epoxy.
• Moisture sensitivity level 1 rated for standard manufacturing processes.

Applications

• Low-frequency power amplifier circuits
• General-purpose switching applications
• Complementary pairs with PNP transistors

Procurement Notes

Verify the ordering suffix matches the required hFE bin; the '-C' suffix specifies a gain range of 60 to 120. Confirm the '-BP' suffix corresponds to bulk packaging containing 1,000 pieces per box. Ensure the application does not involve life support systems without explicit manufacturer approval. Check for halogen-free requirements by verifying if an '-HF' suffix is necessary for specific environmental compliance standards.

Selection Notes

Select this component when a 120 V collector-emitter voltage rating and 1.5 A continuous current capability are required. The TO-92 through-hole package is suitable for standard PCB mounting. Choose the '-C' gain bin if the design requires a minimum hFE of 60 but does not need higher amplification levels found in other bins. Consider the 1 W power dissipation limit and thermal management needs for the intended operating environment.

Part Context

This part belongs to the 2SD669 series of NPN bipolar junction transistors manufactured by Micro Commercial Components. The series includes variants with different voltage ratings, such as the 2SD669A which offers a 160 V breakdown voltage. The components are designed for general-purpose use in consumer electronics and industrial equipment requiring reliable small-signal or medium-power amplification.

Replacement Considerations

Direct substitutes include the 2SD669A series for higher voltage applications (160 V). Other manufacturers producing equivalent NPN TO-92 transistors with similar 120 V / 1.5 A ratings may be used if electrical parameters match. Verify pinout compatibility (Emitter, Collector, Base) before substitution.

FAQ

What is the DC current gain range for the 2SD669-C variant?

The 'C' suffix denotes an hFE rank of 60 to 120, measured at IC=150 mA and VCE=5 V.

Is the 2SD669-C-BP halogen-free?

Standard parts are not explicitly stated as halogen-free. Halogen-free versions are available upon request by adding the '-HF' suffix to the part number.

What is the maximum collector-base breakdown voltage?

The maximum collector-base breakdown voltage (V(BR)CBO) is 180 Vdc.