2SD669-D-BP

Overview

The MCC 2SD669-D-BP is an NPN silicon small-signal transistor in a TO-92 package. It features a maximum collector current of 1.5 A and a collector-emitter breakdown voltage of 120 V. The device offers a transition frequency of 140 MHz (typical) and supports up to 1 W power dissipation. The -D suffix indicates a DC current gain rank of 160 to 320. The -BP suffix designates bulk packaging containing 1,000 pieces per box.

Feature Summary

• NPN silicon construction with plastic encapsulation
• Capable of 1 Watt power dissipation
• High collector current handling up to 1.5 A
• Lead-free finish compliant with RoHS standards

Applications

• Low frequency power amplifiers
• General purpose switching applications
• Complementary pairs with UTC 2SB649/A

Procurement Notes

Verify the specific ordering suffixes against the official datasheet to ensure correct electrical characteristics and packaging. Confirm that the -BP designation corresponds to the required bulk quantity of 1,000 units per box. Ensure compliance with environmental directives such as RoHS if lead-free plating is mandatory for the assembly process.

Selection Notes

Select this component when a high-gain NPN transistor with 120 V collector-emitter voltage is required. The -D classification ensures a minimum hFE of 160, suitable for amplifier stages requiring consistent gain. Verify that the TO-92 through-hole package fits the target PCB layout constraints.

Part Context

This part belongs to the 2SD669 series manufactured by Micro Commercial Components. It serves as a general-purpose bipolar junction transistor designed for low-frequency power amplification and switching tasks within electronic circuits.

Replacement Considerations

Compatible substitutes include the 2SD669A variant, which provides a higher 160 V collector-emitter breakdown voltage while maintaining similar current capabilities.