2SD789D-E

Overview

The 2SD789D-E is an NPN single bipolar junction transistor manufactured by Renesas Electronics Corporation. It is designed for small-signal applications, featuring a maximum collector current of 1 A and a transition frequency of 150 MHz. The device supports a maximum power dissipation of 1 W and operates within a temperature range of -40 °C to 150 °C. It has a minimum DC current gain (hFE) of 800 and utilizes a through-hole package configuration.

Feature Summary

• NPN polarity configuration for standard switching and amplification tasks
• High transition frequency capability supporting signal processing at 150 MHz
• Robust thermal performance with a maximum operating temperature of 150 °C
• High DC current gain ensuring efficient control in low-power circuits

Applications

• General-purpose small-signal amplification
• Electronic switching circuits
• Audio signal processing stages
• Control logic interfaces

Procurement Notes

Verify the specific package type and pinout configuration against official Renesas documentation prior to integration. Confirm that the lead-free status aligns with project requirements. Ensure the operating voltage and current limits remain within the specified absolute maximum ratings to prevent device failure during implementation.

Selection Notes

Select this component for designs requiring high current gain and moderate speed in through-hole layouts. Consider the 1 W power dissipation limit when designing heat management strategies. Evaluate the 150 MHz transition frequency against the target signal bandwidth to ensure adequate performance margins for the intended application.

Part Context

This part belongs to the Renesas discrete semiconductor product line, specifically categorized under bipolar transistors. It serves as a fundamental active component for analog and digital circuit designs, providing reliable switching and amplification capabilities within the broader portfolio of electronic building blocks offered by the manufacturer.

Replacement Considerations

Consult official Renesas substitution lists for verified compatible alternatives. Cross-reference electrical parameters such as hFE, fT, and Vceo to ensure functional equivalence. Verify package compatibility before replacing the component in existing hardware designs.