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The MCC 2SD874-R-TP is an NPN silicon power transistor housed in a SOT-89 package. It features a collector-emitter voltage of 25 V, a collector-base voltage of 30 V, and an emitter-base voltage of 5 V. The device supports a continuous collector current of 1 A with a maximum power dissipation of 500 mW. Operating junction temperatures range from -55°C to +150°C. Electrical characteristics include a forward current transfer ratio (hFE) ranging from 50 to 340 depending on bias conditions, a transition frequency (fT) of 200 MHz, and low saturation voltages.
Verify the specific suffix configuration when ordering. The standard part number includes the -TP designation indicating tape and reel packaging containing 1000 pieces per reel. Confirm RoHS compliance status as indicated by the manufacturer documentation. Ensure sourcing through authorized distributors to guarantee genuine components and full traceability. Check for halogen-free availability if required by specific project constraints.
Select this component for designs requiring moderate power handling within a compact SOT-89 footprint. The 1 A collector current capability suits various low-to-medium power amplifier tasks. Consider the hFE ranking options available for specific gain requirements. Verify thermal management strategies given the 500 mW power dissipation limit. Ensure operating voltages remain within the specified 25 V collector-emitter breakdown limits.
This transistor belongs to the Micro Commercial Components NPN silicon power transistor series. It utilizes a three-terminal SOT-89 surface-mount package. The device is manufactured using standard silicon planar technology. MCC provides this component for commercial electronic applications requiring reliable amplification or switching performance.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official MCC resources or distributor cross-reference tools for compatible alternatives.