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Product Detailed Parameters
- Description：TRANS NPN 50V 1A SOT-89
- Series：-
- Mfr：MCC (Micro Commercial Components)
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Vce Saturation (Max) @ Ib, Ic：400mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 500mA, 10V
- Power - Max：500 mW
- Frequency - Transition：200MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-243AA
- Supplier Device Package：SOT-89
- Grade：-
- Qualification：-
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Overview
The MCC 2SD874A-R-TP is an NPN silicon power transistor housed in a SOT-89 package. It supports a collector-emitter voltage of 50 V and a continuous collector current of 1 A, with a maximum power dissipation of 500 mW. The device features a transition frequency of 200 MHz and low saturation voltages. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Designed for power amplifier applications
- Low collector-emitter saturation voltage
- Miniature surface-mount package
Applications
- Power amplifier circuits
- Low-frequency amplification stages
- General-purpose switching applications
Procurement Notes
Verify the specific hFE bin (Q, R, or S) required for your design, as gain ranges vary by marking suffix. Confirm RoHS compliance status via the datasheet, noting that the standard part may differ from the explicitly compliant variant. Ensure the ordering suffix matches the desired packaging format and halogen-free requirements before finalizing procurement.
Selection Notes
Select this component when a compact SOT-89 footprint is necessary for medium-power NPN amplification. Consider the hFE classification rank to ensure sufficient current gain for your specific load conditions. Verify thermal management capabilities, as the 500 mW dissipation rating requires adequate PCB copper area or heatsinking for sustained operation.
Part Context
This transistor belongs to the 2SD874 series, which includes complementary PNP types like the 2SB0766. It is manufactured using silicon epitaxial planar technology. The device is intended for general electronic equipment where downsizing and low saturation characteristics are prioritized over high-voltage handling.
Replacement Considerations
The complementary PNP type is the 2SB0766. Other NPN transistors with similar 50V/1A ratings in SOT-89 packages may serve as substitutes if electrical parameters align.
FAQ
What is the maximum collector current for the 2SD874A?
The maximum continuous collector current (IC) is rated at 1 A.
Does the standard 2SD874A-R-TP meet RoHS standards?
RoHS compliance is designated by a "P" suffix. Users should verify if their specific order includes this suffix for full compliance.
How is the hFE gain classified?
The device is classified into ranks Q, R, and S, with forward current transfer ratios ranging from 85 to 340 depending on the specific bin.
