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Product Detailed Parameters
- Description：TRANS NPN 60V 3A TO-220AB
- Series：-
- Mfr：MCC (Micro Commercial Components)
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：3:00 AM
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：1V @ 300mA, 3A
- Current - Collector Cutoff (Max)：100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 500mA, 5V
- Power - Max：1.5 W
- Frequency - Transition：3MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The MCC 2SD880-Y-BP is an NPN silicon power transistor designed for high-performance applications. It features a collector-emitter voltage (VCEO) of 60 V and a continuous collector current (IC) rating of 3 A. The device dissipates up to 1.5 W of power at 25°C, with a junction temperature range spanning from -55°C to +150°C. The 'Y' suffix indicates a forward current transfer ratio (hFE) classification between 100 and 200. Packaged in a TO-220 housing, it offers low saturation voltage and robust construction suitable for demanding circuits.
Feature Summary
- High current capability optimized for power amplifier applications
- Low collector-emitter saturation voltage for efficient switching
- Planar technology construction ensuring rugged performance
Applications
- Power amplifier circuits
- General-purpose power switching
- Medium-power amplification stages
Procurement Notes
Verify the component matches the specific datasheet revision C documentation provided by Micro Commercial Components. Confirm the ordering suffix '-BP' corresponds to bulk packaging containing 1,000 pieces per box. Ensure the 'Y' gain bin aligns with circuit requirements for hFE values between 100 and 200. Purchase only from authorized distributors to guarantee genuine parts and full traceability as mandated by manufacturer policy.
Selection Notes
Select this component when designing circuits requiring a 3 A NPN transistor with a 60 V breakdown voltage. The TO-220 package facilitates heat dissipation for the 1.5 W power rating. Verify that the required hFE gain falls within the 100-200 range specified by the 'Y' suffix. Consider the complementary PNP type if a push-pull configuration is needed for the application design.
Part Context
This part belongs to the 2SD880 series of NPN silicon power transistors manufactured by Micro Commercial Components. It utilizes planar technology to achieve high reliability and performance characteristics. The series is engineered for medium-power applications, providing a balance of voltage handling and current capacity within a standard through-hole mounting footprint.
Replacement Considerations
Consult official cross-reference data for verified substitutes. Ensure any replacement maintains the 60 V VCEO rating, 3 A IC limit, and compatible TO-220 physical dimensions. Verify electrical parameters such as hFE and saturation voltage meet or exceed original specifications.
FAQ
What does the 'Y' suffix indicate in the 2SD880-Y model?
The 'Y' suffix designates the forward current transfer ratio (hFE) classification, specifying a gain range between 100 and 200.
Is the 2SD880-Y-BP RoHS compliant?
Yes, the 'P' suffix in the base designation indicates the product is lead-free and RoHS compliant.
What is the maximum junction temperature for this transistor?
The maximum operating junction temperature is +150°C.
