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The 2SD882-AZ is a single NPN bipolar junction transistor manufactured by Renesas Electronics. It utilizes planar technology to deliver rugged, high-performance characteristics suitable for medium-power applications. The device features a maximum collector current of 3 A and a collector-emitter voltage rating of 30 V. Key electrical parameters include a transition frequency of 100 MHz and a power dissipation capacity of 12.5 W. It operates within a temperature range of -65 °C to +150 °C and is housed in a TO-126-3 through-hole package.
Verify the manufacturer designation on the component marking, as the 2SD882 series has been produced by multiple vendors including STMicroelectronics and Renesas. Confirm that the specific suffix matches the required Renesas specification sheet. Ensure the package type corresponds to the TO-126-3 form factor required for your thermal and mechanical design constraints before finalizing procurement.
Select this component when a robust NPN transistor with 3 A continuous current handling is required in a through-hole package. The low saturation voltage makes it suitable for applications where minimizing conduction losses is critical. Consider the complementary 2SB772 if a matched PNP-NPN pair is needed for symmetrical circuit designs or push-pull amplifier topologies.
The 2SD882 belongs to the family of low-voltage NPN medium-power transistors. Renesas Electronics acquired the business operations previously associated with NEC Electronics Corporation, which originally developed this device line. The part remains an active component for general electronic applications requiring reliable medium-power switching performance.
The 2SB772 serves as the direct complementary PNP counterpart within the same product family. Verify pinout compatibility and thermal resistance specifications when substituting with other generic NPN transistors rated for similar voltage and current levels.