2SD882-Y-BP

2SD882-Y-BP

  • Description:TRANS NPN 30V 3A TO-126
  • Series:-

SKU:7fc1758a6973 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN 30V 3A TO-126
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max):1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 1A, 2V
  • Power - Max:1.25 W
  • Frequency - Transition:50MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126
  • Grade:-
  • Qualification:-

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2SD882-Y-BP

Overview

The 2SD882-Y-BP is an NPN silicon plastic-encapsulated transistor manufactured by Micro Commercial Components. It features a collector-emitter breakdown voltage of 30 V and a collector-base breakdown voltage of 40 V. The device supports a maximum collector current of 3.0 A with a power dissipation capability of 1.25 W. The transition frequency is rated at a minimum of 50 MHz. The 'Y' suffix indicates a DC current gain (hFE) classification range of 160 to 320. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

  • Utilizes planar technology for rugged high-performance operation
  • Features low saturation voltage characteristics
  • Supports high collector current capabilities
  • Epoxy casing meets UL 94 V-0 flammability rating

Applications

  • General-purpose switching circuits
  • Amplifier stages
  • Oscillator circuits

Procurement Notes

Verify the specific ordering suffix '-BP' corresponds to bulk packaging containing 1,000 pieces per box. Confirm that the 'Y' suffix accurately reflects the required hFE binning range of 160 to 320 for your design specifications. Ensure compliance with RoHS standards as indicated by the 'P' suffix designation in the base part number.

Selection Notes

Select this component when a medium-power NPN transistor with a 30 V collector-emitter voltage rating is required. The specified hFE range of 160 to 320 makes it suitable for applications demanding consistent amplification factors. Consider the TO-92 package dimensions and thermal dissipation limits of 1.25 W for proper heat management in the target circuit layout.

Part Context

This component belongs to the 2SD882 series of NPN silicon transistors produced by Micro Commercial Components. It is designed as a general-purpose device utilizing planar technology. The product line includes various hFE classifications and packaging options to accommodate different manufacturing and assembly requirements for electronic designs.

Replacement Considerations

Direct substitutes include other 2SD882 variants from different manufacturers, provided they match the 3A current, 30V voltage, and TO-92 package constraints. Verify that any replacement maintains the required hFE gain range and power dissipation ratings.

FAQ

What does the 'Y' suffix indicate regarding the electrical characteristics?

The 'Y' suffix specifies the DC current gain (hFE) classification, ensuring the device falls within the 160 to 320 range under standard test conditions.

Is the 2SD882-Y-BP compliant with environmental regulations?

Yes, the device is lead-free finish and RoHS compliant, as designated by the 'P' suffix in the base part number structure.

What is the maximum power dissipation capability of this transistor?

The device is capable of dissipating up to 1.25 Watts of power under specified operating conditions.

2SD882-Y-BP2SD882-Y-BP

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