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The 2SD882-Y-BP is an NPN silicon plastic-encapsulated transistor manufactured by Micro Commercial Components. It features a collector-emitter breakdown voltage of 30 V and a collector-base breakdown voltage of 40 V. The device supports a maximum collector current of 3.0 A with a power dissipation capability of 1.25 W. The transition frequency is rated at a minimum of 50 MHz. The 'Y' suffix indicates a DC current gain (hFE) classification range of 160 to 320. It operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix '-BP' corresponds to bulk packaging containing 1,000 pieces per box. Confirm that the 'Y' suffix accurately reflects the required hFE binning range of 160 to 320 for your design specifications. Ensure compliance with RoHS standards as indicated by the 'P' suffix designation in the base part number.
Select this component when a medium-power NPN transistor with a 30 V collector-emitter voltage rating is required. The specified hFE range of 160 to 320 makes it suitable for applications demanding consistent amplification factors. Consider the TO-92 package dimensions and thermal dissipation limits of 1.25 W for proper heat management in the target circuit layout.
This component belongs to the 2SD882 series of NPN silicon transistors produced by Micro Commercial Components. It is designed as a general-purpose device utilizing planar technology. The product line includes various hFE classifications and packaging options to accommodate different manufacturing and assembly requirements for electronic designs.
Direct substitutes include other 2SD882 variants from different manufacturers, provided they match the 3A current, 30V voltage, and TO-92 package constraints. Verify that any replacement maintains the required hFE gain range and power dissipation ratings.
The 'Y' suffix specifies the DC current gain (hFE) classification, ensuring the device falls within the 160 to 320 range under standard test conditions.
Yes, the device is lead-free finish and RoHS compliant, as designated by the 'P' suffix in the base part number structure.
The device is capable of dissipating up to 1.25 Watts of power under specified operating conditions.