2SD985-AZ

Overview

The Renesas 2SD985-AZ is an NPN silicon small-signal bipolar transistor configured as a Darlington pair. It supports a maximum collector current of 1.5 A and a collector-emitter breakdown voltage of 60 V. The device features a minimum DC current gain (hFE) of 4000, facilitating high-sensitivity switching applications. It utilizes a TO-126 through-hole package with a flange mount configuration. The component operates within a temperature range up to 150 °C and includes built-in diode and resistor elements for circuit integration.

Feature Summary

• Darlington configuration with integrated diode and resistor
• High DC current gain exceeding 4000
• NPN silicon construction for switching tasks

Applications

• General purpose signal amplification
• Low-power switching circuits
• Interface driver stages

Procurement Notes

Verify the specific suffix 'AZ' against the manufacturer's official datasheet to confirm pinout and internal resistance values. Ensure the TO-126 flange mount package matches thermal requirements. Confirm that the built-in components align with the target circuit design before procurement.

Selection Notes

Select this component for applications requiring high input impedance and substantial current drive capability from low-level signals. The integrated passive elements simplify biasing networks. Evaluate thermal dissipation needs due to the single-element power rating in the specified package.

Part Context

This part belongs to Renesas Electronics Corporation's discrete semiconductor portfolio, specifically within the bipolar junction transistor category. It serves as a replacement or alternative for legacy NPN Darlington transistors in industrial and consumer electronics designs requiring robust switching performance.

Replacement Considerations

Cross-reference with equivalent NPN Darlington transistors offering similar 60V/1.5A ratings. Verify pin compatibility and thermal characteristics when substituting with other manufacturers' TO-126 packages.