2SJ133-Z-E1-AZ

2SJ133-Z-E1-AZ

$1.13
  • Description:POWER FIELD-EFFECT TRANSISTOR
  • Series:*
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk

SKU:33526884608b Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:POWER FIELD-EFFECT TRANSISTOR
  • Series:*
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

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2SJ133-Z-E1-AZ

Overview

The 2SJ133-Z-E1-AZ is a P-Channel Power Field-Effect Transistor manufactured by Renesas Electronics Corporation. It is designed for switching applications and operates with a maximum drain-source voltage of 60V and a continuous drain current of 2A. The component utilizes silicon technology and is available in a lead-free, RoHS-compliant package.

Feature Summary

  • P-Channel power MOSFET architecture optimized for switching operations
  • Lead-free construction compliant with RoHS standards

Applications

  • General purpose power switching circuits
  • Low voltage DC-DC converter stages

Procurement Notes

Verify the specific suffix -E1-AZ to confirm lead-free and RoHS compliance status as defined by the manufacturer. Confirm availability through authorized distributors, as stock levels fluctuate. Ensure the ordering part number matches the exact electrical specifications required for the target application circuit design.

Selection Notes

Select this component for low-voltage applications requiring up to 60V blocking capability and 2A current handling. Consider the P-Channel configuration for high-side switching requirements. Verify thermal management needs based on the specific package type and expected duty cycle in the final system design.

Part Context

This device belongs to the Renesas 2SJ133 series of single N-Channel and P-Channel power MOSFETs. These components are engineered for general-purpose switching tasks in consumer electronics and industrial control systems where moderate voltage and current ratings are sufficient.

Replacement Considerations

Equivalent parts include other 60V P-Channel MOSFETs with similar 2A current ratings. Verify pinout compatibility and thermal resistance values before substitution.

2SJ133-Z-E1-AZ2SJ133-Z-E1-AZ
$1.13
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