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The 2SJ133-Z-E1-AZ is a P-Channel Power Field-Effect Transistor manufactured by Renesas Electronics Corporation. It is designed for switching applications and operates with a maximum drain-source voltage of 60V and a continuous drain current of 2A. The component utilizes silicon technology and is available in a lead-free, RoHS-compliant package.
Verify the specific suffix -E1-AZ to confirm lead-free and RoHS compliance status as defined by the manufacturer. Confirm availability through authorized distributors, as stock levels fluctuate. Ensure the ordering part number matches the exact electrical specifications required for the target application circuit design.
Select this component for low-voltage applications requiring up to 60V blocking capability and 2A current handling. Consider the P-Channel configuration for high-side switching requirements. Verify thermal management needs based on the specific package type and expected duty cycle in the final system design.
This device belongs to the Renesas 2SJ133 series of single N-Channel and P-Channel power MOSFETs. These components are engineered for general-purpose switching tasks in consumer electronics and industrial control systems where moderate voltage and current ratings are sufficient.
Equivalent parts include other 60V P-Channel MOSFETs with similar 2A current ratings. Verify pinout compatibility and thermal resistance values before substitution.