ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET P-CH 60V 200MA SC59
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：85 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：200mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SC-59
- Package / Case：TO-236-3, SC-59, SOT-23-3
Download product information
Overview
The 2SJ168 is a silicon P-channel MOS field-effect transistor designed for high-speed switching, analog switch, and interface applications. It features an enhancement-mode structure with a drain-source voltage rating of -60 V and a continuous drain current capacity of -200 mA. The device exhibits a typical turn-on time of 14 ns and a forward transfer admittance of at least 100 mS. Its low on-resistance is typically 1.3 Ω at a drain current of -50 mA. The component is housed in a JEITA SC-59 surface-mount package.
Feature Summary
- Optimized for high-speed switching operations with rapid turn-on characteristics
- Provides high forward transfer admittance for effective signal amplification
- Features low on-resistance to minimize power loss during conduction
Applications
- High-speed switching circuits
- Analog switch implementations
- General-purpose interface applications
Procurement Notes
Verify the specific ordering suffix required for tape-and-reel packaging when placing orders. Confirm that the requested quantity aligns with standard reel sizes to ensure proper handling. Check for any recent updates to the datasheet regarding reliability derating guidelines before finalizing procurement specifications.
Selection Notes
Select this component for designs requiring fast response times and low conduction losses in P-channel configurations. Ensure the gate drive voltage meets the threshold requirements for full enhancement. Consider thermal management strategies as the maximum channel temperature reaches 150 °C under load conditions.
Part Context
This part belongs to Toshiba's discrete semiconductor lineup focusing on small-signal MOSFETs. It serves as a complementary counterpart to the N-channel 2SK1062 device within the manufacturer's portfolio. The technology utilizes silicon fabrication processes optimized for performance in compact surface-mount packages.
Replacement Considerations
The 2SK1062 is documented as the complementary N-channel device. Verify pinout compatibility and electrical parameter alignment before substituting with other P-channel MOSFETs from different manufacturers.
