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Product Detailed Parameters
- Description：P-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SJ176-E is a P-channel power MOSFET manufactured by Renesas Electronics Corporation. It is designed for high-speed power switching applications, utilizing silicon technology to deliver robust performance in electronic circuits. The component is housed in a TO-220FM package, providing a reliable solution for industrial and commercial electronics where efficient power management and thermal stability are required.
Feature Summary
- High-speed power switching capability
- P-channel silicon construction
- Industrial-grade reliability
Applications
- Industrial electronics systems
- Commercial electronic equipment
- Power switching circuits
Procurement Notes
Verify the manufacturer designation as Renesas Electronics Corporation or its predecessor Hitachi Semiconductor, as the device lineage may reflect historical branding. Confirm the specific package variant matches the TO-220FM specification. Ensure the part number suffix '-E' aligns with current production status, noting that older designations might appear in legacy documentation.
Selection Notes
Select this component for applications requiring P-channel power switching with high-speed characteristics. The TO-220FM package offers distinct thermal and mechanical advantages for through-hole mounting. Evaluate compatibility with existing circuit designs for industrial and commercial power management needs, ensuring voltage and current ratings meet system requirements.
Part Context
This component belongs to the family of single FETs and power MOSFETs produced by Renesas Electronics Corporation. Originally associated with Hitachi Semiconductor, the product line continues under Renesas, maintaining specifications for high-speed power switching. It serves as a discrete semiconductor solution for managing power flow in various electronic architectures.
Replacement Considerations
Consult official Renesas or Hitachi Semiconductor cross-reference lists for verified substitutes. Ensure any replacement maintains the P-channel configuration, TO-220FM package, and high-speed switching performance characteristics documented for the original part.
