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Product Detailed Parameters
- Description：P-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SJ199(0)-T1-AZ is a P-channel vertical type MOS field-effect transistor manufactured by Renesas Electronics. Designed as a switching device, it is engineered to be driven directly by the output of integrated circuits utilizing a 5 V power supply. The component features low on-state resistance characteristics, ensuring efficient performance in switching applications.
Feature Summary
- Vertical P-channel MOSFET structure optimized for switching operations
- Capable of direct drive from 5 V logic IC outputs
- Low on-state resistance specification for efficient conduction
Applications
- Switching circuits driven by 5 V logic interfaces
- Complementary pairing with N-channel devices such as the 2SK1485
- General-purpose power switching applications requiring direct logic control
Procurement Notes
Verify the specific suffix and manufacturer origin carefully, as the base part number has been produced by multiple vendors including NEC and Renesas Technology Corp. Confirm RoHS compliance status and current availability, as older manufacturing lines may have different packaging or lifecycle statuses. Cross-reference the exact datasheet version to ensure electrical parameters match your design requirements before procurement.
Selection Notes
Select this component when a P-channel MOSFET requires direct interfacing with 5 V logic without additional level shifting. Consider its complementary relationship with N-channel devices like the 2SK1485 if matched pairs are needed. Evaluate the on-state resistance at your specific gate-source voltage to ensure it meets your efficiency targets compared to other available switching transistors.
Part Context
This component belongs to the broader category of discrete semiconductor devices, specifically metal-oxide-semiconductor field-effect transistors (MOSFETs). It represents legacy switching technology originally developed by NEC Corporation and later continued under Renesas Electronics. The part is distinct from modern high-voltage GaN or SiC devices, serving traditional silicon-based switching roles.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative P-channel MOSFETs based on pinout, voltage ratings, and on-resistance specifications.
