2SJ205-T1-AZ

$0.40

Description：P-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk

SKU:ec37701e2db8 Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：P-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

Download product information

2SJ205-T1-AZ

Overview

The Renesas Electronics Corporation 2SJ205-T1-AZ is a P-channel vertical type MOS FET designed for switching applications. It features a maximum drain-source voltage of 16V and a continuous drain current of 0.5A. The device exhibits a low on-state resistance, specified as 5.0 Ω MAX at VGS = -2.5V and ID = -10mA, or 3.0 Ω MAX at VGS = -4V and ID = -0.3A. It utilizes an SC-62 small outline package with three terminals. The component is constructed from silicon metal-oxide semiconductor material and is suitable for appliances requiring power saving, such as VCR cameras and headphone stereos.

Feature Summary

Directly driven by ICs having a 3 V power supply
High input impedance eliminates the need to consider driving current
Reduces part count by omitting bias resistors

Applications

VCR cameras
Headphone stereos
Power saving appliances

Procurement Notes

Verify the manufacturer designation carefully, as source documentation identifies NEC (NEC Electronics) as the original producer rather than Renesas. Confirm that the specific suffix -T1-AZ aligns with the required packaging and terminal finish specifications for your assembly process. Ensure compliance with the non-Rohs certification status indicated in the provided technical data before finalizing procurement plans.

Selection Notes

Select this component for low-voltage switching circuits where direct IC drive capability is essential. The high input impedance simplifies driver design by removing the requirement for external biasing components. Evaluate the 16V breakdown voltage and 0.5A current limits against your specific load requirements to ensure adequate operational margins within the intended application environment.

Part Context

This component belongs to the category of discrete semiconductor transistors, specifically Power Field-Effect Transistors. It serves as a fundamental switching element in electronic circuits. The device represents a legacy product line originally developed by NEC, focusing on efficient power management for consumer electronics through optimized gate drive characteristics and compact surface-mount packaging solutions.