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Product Detailed Parameters
- Description：2SJ254 - P-CHANNEL MOS SILICON F
- Series：*
- Mfr：Sanyo
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The Sanyo 2SJ254 is a P-channel silicon MOSFET designed for high-reliability applications. It features a maximum drain-source breakdown voltage of 30V and supports a continuous drain current of 12A. The device exhibits a low on-resistance of 0.13 ohms, facilitating efficient power handling. With a maximum pulse drain current capability of 48A and an absolute maximum power dissipation of 60W, it is suitable for demanding switching environments. The component utilizes a small outline plastic package with three terminals.
Feature Summary
- P-channel silicon metal-oxide semiconductor construction
- Designed for very high-speed switching applications
- High reliability classification for robust performance
Applications
- High-speed switching circuits
- Power management systems requiring P-channel control
- Industrial electronic equipment
Procurement Notes
Verify the manufacturer designation as Sanyo or Sanyo Semicon Device when sourcing. Confirm the specific package type corresponds to the required footprint. Ensure the part number matches exactly to avoid confusion with similar series components. Check for any specific handling requirements associated with high-reliability discrete semiconductors during assembly.
Selection Notes
Select this component when a P-channel MOSFET with 30V rating and 12A continuous current capacity is required. Consider the 0.13 ohm on-resistance for thermal management in power paths. Evaluate the 60W power dissipation limit against the expected operating conditions. Ensure the small outline package fits the available board space constraints.
Part Context
This device belongs to the single FET and MOSFET category from Sanyo. It is distinct from other models in the series by its specific voltage and current ratings. The component serves as a discrete semiconductor solution for switching tasks. Its design focuses on balancing speed and power handling capabilities within a compact form factor.
Replacement Considerations
Consult official substitution lists for verified equivalents. Cross-reference parameters such as voltage, current, and resistance before replacing. Ensure pinout compatibility if substituting with packages from different manufacturers.
