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Product Detailed Parameters
- Description：PCH 4V DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The 2SJ277-DL-E is a P-channel power MOSFET designed for very high-speed switching applications. It features a maximum drain-source breakdown voltage of 100 V and a continuous drain current rating of 15 A. The device exhibits a maximum on-resistance of 0.22 Ω and supports a peak pulsed drain current of 60 A. It operates within a temperature range of -55°C to +150°C and utilizes an inline plastic package with three terminals.
Feature Summary
- Engineered for very high-speed switching applications
- P-channel enhancement mode construction
- Built-in diode configuration
Applications
- High-frequency power conversion circuits
- Motor drive systems requiring fast switching
- Power supply output stages
Procurement Notes
Verify the specific suffix DL-E against official manufacturer documentation to confirm pinout, thermal characteristics, and exact packaging details. Ensure the component meets all required electrical ratings for the intended application environment before integration.
Selection Notes
Select this component when high-speed switching performance and robust current handling are critical. The low on-resistance minimizes conduction losses, while the high breakdown voltage provides safety margins in demanding power electronics designs.
Part Context
This part belongs to the discrete semiconductor transistor category, specifically within the field-effect transistor segment. It serves as a fundamental switching element in power management and control circuits where rapid transition times are necessary.
Replacement Considerations
Consult official substitution guides for compatible P-channel MOSFETs with matching voltage and current ratings. Verify that any alternative device maintains equivalent switching speeds and thermal performance characteristics.
