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Product Detailed Parameters
- Description：P-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The Renesas 2SJ296STL-E is a P-channel MOSFET designed for high-speed switching applications. It features a low on-resistance and fast switching characteristics suitable for power management circuits. The device is housed in a compact surface-mount package, facilitating automated assembly and space-constrained designs. Key electrical parameters include a drain-source voltage rating of -20V and a continuous drain current capability optimized for efficient power conversion tasks.
Feature Summary
- Optimized for low conduction losses in power supply applications
- Fast switching performance reduces dynamic power dissipation
- Robust gate oxide reliability ensures long-term operational stability
Applications
- DC-DC converter output stages
- Load switch implementations
- Motor driver circuits
Procurement Notes
Verify the exact ordering code against the manufacturer's latest datasheet to ensure compatibility with specific thermal and electrical requirements. Confirm that the component meets all relevant safety and environmental standards required for your target market before finalizing procurement decisions.
Selection Notes
Select this component based on its specific voltage and current ratings relative to the circuit design requirements. Consider the thermal resistance characteristics and package type to ensure adequate heat dissipation within the intended application environment without exceeding maximum junction temperature limits.
Part Context
This part belongs to Renesas' portfolio of discrete power semiconductors aimed at improving energy efficiency in electronic systems. It complements other MOSFET offerings by providing specialized performance traits for specific switching frequencies and load conditions within modern power electronics architectures.
Replacement Considerations
Consult official substitution guides for compatible alternatives. Ensure any replacement matches the pinout, voltage ratings, and thermal characteristics to maintain system integrity and performance specifications.
