2SJ320

2SJ320

$0.46
  • Description:P-CHANNEL POWER MOSFET
  • Series:*
  • Mfr:Sanyo
  • Package:Bulk

SKU:0de04e9ded1c Category: Brand:

  
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Product Detailed Parameters

  • Description:P-CHANNEL POWER MOSFET
  • Series:*
  • Mfr:Sanyo
  • Package:Bulk
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

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2SJ320

Overview

The Sanyo 2SJ320 is a P-channel silicon power MOSFET designed for high-voltage switching applications. It features a maximum drain-source voltage of 250V and a continuous drain current rating of 4A. The device exhibits a maximum on-resistance of 1.3 ohms, ensuring efficient conduction in single-element configurations. Housed in an isolated TO-220AB flange-mount package with three pins, it supports depletion mode operation. The component utilizes metal-oxide semiconductor technology within a plastic/epoxy rectangular body, suitable for robust thermal management in industrial environments.

Feature Summary

  • Capable of handling high drain-source voltages up to 250V for robust circuit protection
  • Provides reliable switching performance with a 4A continuous current capacity
  • Features an isolated flange-mount package for effective heat dissipation

Applications

  • High-voltage DC-DC converter circuits
  • Industrial motor control systems
  • Power supply output stages

Procurement Notes

Verify the specific suffix designation, such as -RB, against official manufacturer documentation to ensure exact electrical and mechanical compatibility. Confirm that the sourcing channel provides genuine components from authorized distributors or direct manufacturer channels. Request detailed datasheets to validate pinout configurations and absolute maximum ratings prior to integration into final designs.

Selection Notes

Select this component when designing circuits requiring high voltage isolation and moderate current handling capabilities. The depletion mode operation requires careful gate drive consideration compared to enhancement modes. Ensure the thermal design accommodates the power dissipation associated with the 1.3 ohm on-resistance at the expected operating load currents.

Part Context

This part belongs to the Sanyo (now Semicon) lineup of discrete power semiconductors. It serves as a specialized solution for power electronics where high voltage blocking capability is critical. The TO-220AB packaging standardizes its integration into existing board layouts and heatsink structures commonly used in legacy and modern industrial equipment designs.

Replacement Considerations

Consult official substitution guides for verified equivalents. Cross-referencing should prioritize matching the 250V rating, 4A current limit, and TO-220AB package dimensions to maintain mechanical and electrical integrity without redesigning the host system.

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