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Product Detailed Parameters
- Description：P-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SJ356-T1-AZ is a P-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a single channel configuration with an input capacitance (Ciss) of 270 pF typical. The device is lead-free and has a Moisture Sensitivity Level (MSL) of 1. It utilizes an embossed tape carrier type for handling.
Feature Summary
- P-channel silicon metal-oxide semiconductor field-effect transistor structure
- Single channel configuration for switching applications
- Lead-free construction compliant with environmental standards
Applications
- Automotive power management circuits
- Industrial high-speed switching modules
- General-purpose power control systems
Procurement Notes
Verify the specific suffix -T1-AZ to confirm package and reel specifications. Ensure compatibility with MSL 1 handling requirements during assembly. Confirm lead-free status matches project environmental regulations. Cross-reference with official Renesas documentation for exact pinout and thermal characteristics before integration.
Selection Notes
Select this component for applications requiring a P-channel MOSFET with low input capacitance. Consider the single-channel design for space-constrained layouts. Verify voltage ratings against circuit requirements as datasheet specifics are not fully detailed in available summaries. Evaluate thermal performance based on intended load conditions.
Part Context
This part belongs to Renesas' automotive-grade power MOSFET portfolio. It is designed for reliability in demanding environments. The product line emphasizes efficiency and robustness for modern electronic systems. Renesas focuses on integrating such components into broader solution architectures.
Replacement Considerations
Check for direct substitutes like the 2SJ356(0)-T1-AY, noting potential differences in RDS(on) and qualification levels. Verify pin compatibility and electrical parameters before substitution. Consult official cross-reference guides for approved alternatives.
