2SJ356(0)-T1-AZ

$0.48

Description：P-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk

SKU:2e0bf0b746b7 Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：P-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SJ356(0)-T1-AZ

Overview

The 2SJ356(0)-T1-AZ is a P-channel power MOSFET manufactured by Renesas Electronics Corporation. Designed for automotive applications, this silicon-based device features a single channel configuration with three leads. It is supplied in an embossed tape carrier format and holds a Moisture Sensitivity Level of 1. The component is lead-free compliant. Typical input capacitance (Ciss) is specified at 270 pF.

Feature Summary

Engineered specifically for automotive electronic systems requiring reliable switching performance.
Utilizes silicon metal-oxide semiconductor technology for robust operation.
Complies with lead-free manufacturing standards for environmental safety.

Applications

Automotive power management circuits
Automotive load switching applications
General automotive electronic control units

Procurement Notes

Verify the specific suffix designation against official Renesas documentation to ensure correct variant identification. Confirm that the required package type matches the intended PCB layout constraints. Check current production status as automotive components may undergo lifecycle changes. Ensure storage conditions adhere to the specified moisture sensitivity level requirements prior to assembly.

Selection Notes

Select this component when a P-channel MOSFET is required for automotive-grade environments. Consider the typical input capacitance value for gate drive circuit design. Verify voltage and current ratings against the specific application load requirements. Ensure compatibility with the embossed tape packaging method used in automated assembly processes.

Part Context

This part belongs to Renesas' portfolio of power MOSFETs tailored for the automotive sector. It represents a standard discrete switching solution within their broader range of semiconductor devices. The product line focuses on providing reliable components for vehicle electronics, supporting various automotive subsystems that demand high durability and consistent electrical characteristics.

Replacement Considerations

Consult official Renesas substitution guides for verified alternatives. Cross-reference pinouts and electrical specifications carefully before replacing. Generic equivalents may not meet automotive qualification standards.