2SJ358C(0)-T1-AZ

Description：TRANSISTOR
Series：-

SKU:0659a5f27d02 Category: Single Bipolar Transistors Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：TRANSISTOR
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)
Transistor Type：-
Current - Collector (Ic) (Max)：-
Voltage - Collector Emitter Breakdown (Max)：-
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Power - Max：-
Frequency - Transition：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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2SJ358C(0)-T1-AZ

Overview

The 2SJ358C(0)-T1-AZ is a P-channel vertical MOSFET designed for general-purpose switching applications. It supports direct drive from a 4.0 V power source and features low on-state resistance, with maximum values of 143 mΩ at -10 V gate drive, 179 mΩ at -4.5 V, and 190 mΩ at -4.0 V (all at -2.0 A drain current). The device has a Drain-Source voltage rating of -60 V, a continuous Drain current of -3.5 A, and a pulsed current capability of -14 A. Total power dissipation is rated at 2.0 W, with a channel temperature limit of 150°C.

Feature Summary

Directly driven by a 4.0 V power source
Low on-state resistance across various gate voltages

Applications

General-purpose switching circuits

Procurement Notes

Verify the specific ordering suffix to confirm lead plating composition, as -AZ indicates Sn-Bi plating while -AY indicates Pure Sn plating. Confirm that the SC-84 package variant matches the required reel packing quantity of 1000 pieces per reel. Ensure compliance with RoHS standards regarding lead-free external electrodes.

Selection Notes

Select this component when a P-channel MOSFET capable of operating directly from a 4.0 V logic level is required. Evaluate the thermal derating characteristics against the expected ambient temperature range, noting the 2.0 W total power dissipation limit. Consider the internal ESD protection diode between the gate and source when designing circuits exposed to potential overvoltage conditions.

Part Context

This part belongs to the Renesas Electronics 2SJ358 series of P-channel MOSFETs. It utilizes an SC-84 (MP-2) surface-mount package. The marking code XT1 identifies the device on the package body. The datasheet revision history indicates updates to safe operating area and forward voltage characteristics through August 2015.