2SJ360(F)

$0.51

Description：MOSFET P-CH 60V 1A PW-MINI
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk

SKU:1a9151935295 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 60V 1A PW-MINI
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：730mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：6.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：155 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PW-MINI
Package / Case：TO-243AA

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2SJ360(F)

Overview

The Toshiba 2SJ360 is a silicon P-channel MOS field-effect transistor utilizing L²-π-MOSV technology. It features a drain-source voltage rating of -60 V and a continuous DC drain current of -1 A, with pulse capability up to -4 A. The device exhibits a typical drain-source on-resistance of 0.55 Ω at VGS = -10 V and ID = -0.5 A. Gate threshold voltage ranges from -0.8 V to -2.0 V. Thermal resistance from channel to ambient is 250 °C/W. The component is housed in the SC-62 package.

Feature Summary

Designed for high-speed switching applications including chopper regulators, DC-DC converters, and motor drives.
Supports low-voltage gate drive requirements with a minimum threshold of -0.8 V.
Features low forward transfer admittance and low leakage current characteristics.

Applications

Chopper Regulator
DC-DC Converter
Motor Drive

Procurement Notes

Verify RoHS compatibility status through official Toshiba sales representatives, as markings indicate potential variations between standard and RoHS-compliant lots. Confirm environmental compliance against specific project requirements prior to procurement. Ensure handling precautions are followed due to electrostatic sensitivity.

Selection Notes

Select this component for general electronics applications requiring P-channel switching capabilities within a -60 V and -1 A envelope. Verify that the thermal design accommodates the specified channel-to-ambient thermal resistance. Ensure operating conditions remain within absolute maximum ratings to maintain reliability.

Part Context

This part belongs to the Toshiba Silicon P Channel MOS Type series employing L²-π-MOSV technology. It is categorized for use in high-speed, high-current switching scenarios. The device is distinct from other logic or linear ICs in the manufacturer's portfolio by its discrete power semiconductor classification.