2SJ418-TL-E

$3.67

Description：MOSFET P-CH 30V
Series：*
Mfr：onsemi
Package：Bulk

SKU:f8f0b38697be Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V
Series：*
Mfr：onsemi
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SJ418-TL-E

Overview

The 2SJ418-TL-E is a P-channel JFET manufactured by onsemi, designed for low-noise and high-impedance applications. It features an N-channel configuration with a drain-source voltage (Vdss) of 25 V and a maximum continuous drain current (Id) of 50 mA. The device operates within a junction temperature range up to 150°C and dissipates up to 400 mW of power. Key electrical parameters include a gate-source cutoff voltage (VGS off) of 1.8 V at 100 µA and a maximum input capacitance (Ciss) of 6 pF at 5 V. The typical zero-bias drain current (Idss) is specified as 20 mA at 5 V. It is housed in a surface-mount 3-CPH package.

Feature Summary

Low noise performance suitable for sensitive signal processing
High input impedance characteristics
Compact surface-mount packaging for space-constrained designs

Applications

Audio preamplifier stages
High-impedance sensor interfaces
Low-noise analog switches

Procurement Notes

Verify the specific suffix against official onsemi documentation to confirm exact binning or tape-and-reel specifications. Ensure compatibility with standard SOT-23 footprint layouts during PCB design. Confirm RoHS compliance status through the manufacturer's latest material declaration before final procurement approval.

Selection Notes

Select this component when low noise and high input impedance are critical requirements. Compare Idss variations across different manufacturers if tight current matching is necessary. Ensure the 25 V breakdown voltage aligns with the circuit's maximum operating conditions to prevent device failure.

Part Context

This part belongs to onsemi's discrete JFET portfolio, offering alternatives to legacy components in audio and instrumentation circuits. It provides a modern surface-mount solution for designs previously requiring larger through-hole packages. The 3-CPH package allows for automated assembly processes.