2SJ438,MDKQ(J

Description：MOSFET P-CH TO220NIS
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk

SKU:a0bdb9a91a8d Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH TO220NIS
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：5A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220NIS
Package / Case：TO-220-3 Full Pack

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2SJ438,MDKQ(J

Overview

The Toshiba Semiconductor and Storage 2SJ438 is a silicon P-channel MOS field-effect transistor utilizing L²-π-MOSV technology. It features a drain-source voltage rating of -60 V and a continuous DC drain current capacity of -5 A, with pulse currents reaching -20 A. The device exhibits a typical drain-source ON resistance of 0.16 Ω at VGS = -10 V and ID = -2.5 A. Key electrical characteristics include a forward transfer admittance of 4.0 S and a gate threshold voltage ranging from -0.8 to -2.0 V. Thermal performance includes a channel-to-case thermal resistance of 5.0 °C/W and a maximum channel temperature of 150°C.

Feature Summary

Utilizes L²-π-MOSV technology for enhanced switching performance
Designed for low drain-source ON resistance applications
Features high forward transfer admittance for efficient drive control
Supports 4-V gate drive operation

Applications

DC-DC converter circuits
Relay drive systems
Motor drive applications

Procurement Notes

Verify the specific ordering suffix (e.g., MDKQ(J)) against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility, as indicated by lot number markings. Ensure that procurement channels provide valid datasheets matching the exact part designation to avoid discrepancies in technical specifications or package types.

Selection Notes

Select this component for designs requiring a P-channel MOSFET with a -60 V breakdown voltage and -5 A continuous current capability. Consider the 0.16 Ω typical ON resistance for efficiency requirements and verify that the driving circuit can accommodate the specified gate threshold voltage range. Evaluate thermal management needs based on the 5.0 °C/W channel-to-case thermal resistance for power dissipation calculations.

Part Context

This device belongs to the Toshiba Silicon P-Channel MOS Type series, specifically employing L²-π-MOSV technology. It is categorized as a general-purpose power transistor intended for use in electronic equipment where moderate voltage and current handling are required. The component is designed for surface-mount installation in SC-67 packages.