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Product Detailed Parameters
- Description：POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SJ471-E is a silicon P-channel DV-L MOS FET manufactured by Renesas Electronics Corporation. It is designed for high-speed power switching applications. The device features a TO-220AB package with three terminals. Key electrical characteristics include a drain-source breakdown voltage of 30V and a drain-source resistance of 60mΩ. The maximum power dissipation is rated at 30W, and the maximum operating temperature reaches 150°C. The component is lead-free and RoHS compliant.
Feature Summary
- Utilizes Silicon P-channel DV-L MOS FET technology for efficient power management
- Engineered for high-speed power switching operations
- Constructed in a robust TO-220AB package suitable for thermal management
Applications
- High-speed power switching circuits
- Power management systems requiring P-channel MOSFETs
- Electronic devices utilizing DV-L MOS FET technology
Procurement Notes
Verify the manufacturer designation as Renesas Electronics Corporation or its predecessor Hitachi Semiconductor, as part numbers may have been transferred. Confirm the specific suffix '-E' denotes the correct revision and compliance status. Ensure the package type matches the required TO-220AB form factor. Check for RoHS compliance documentation to meet environmental regulations. Validate the electrical parameters against the official datasheet before integration into designs.
Selection Notes
Select this component when a P-channel MOSFET with 30V breakdown voltage and low on-resistance is required. Consider the TO-220AB package for adequate heat dissipation in moderate power applications. Evaluate the 60mΩ drain-source resistance for efficiency needs. Ensure compatibility with high-speed switching requirements. Verify that the 30W power dissipation rating suits the thermal design constraints of the target application.
Part Context
The 2J471 series originates from Hitachi Semiconductor and was later integrated into Renesas Electronics Corporation's portfolio following corporate mergers. The 'DV-L' designation refers to a specific MOS FET technology optimized for performance. This component represents a legacy power switch solution still referenced in designs requiring reliable P-channel switching capabilities within specified voltage and current limits.
Replacement Considerations
Direct substitutes may include other P-channel MOSFETs with similar 30V V(BR)DSS and <60mΩ RDS(on) ratings in TO-220 packages. Verify pinout compatibility and thermal characteristics. Cross-reference with Hitachi/Renesas equivalent listings if available. Ensure any replacement maintains the same switching speed and power dissipation capabilities.
