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Product Detailed Parameters
- Description：PCH 2.5V DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The 2SJ501-TB-E is a P-channel enhancement-mode MOSFET manufactured by onsemi. It features a maximum drain-source breakdown voltage of 20 V and a continuous drain current rating of 0.5 A. The device exhibits a maximum on-resistance of 0.6 Ω. It is housed in a small outline package with three gull-wing terminals, designed for surface mount applications. The component supports an operating junction temperature up to 150 °C and has a maximum power dissipation of 0.25 W.
Feature Summary
- Designed for ultrahigh-speed switching applications
- Single configuration with built-in diode
- Enhancement mode operation
Applications
- Ultrahigh-speed switching circuits
Procurement Notes
Verify the manufacturer designation carefully, as the 2SJ501 part number was originally associated with Sanyo Semiconductor. Confirm that the specific suffix -TB-E corresponds to the onsemi manufacturing source and packaging specifications. Ensure the component matches the required P-channel MOSFET electrical characteristics and package dimensions before integration into the design.
Selection Notes
Select this component when a compact P-channel MOSFET with low gate charge and fast switching capabilities is required. The 0.6 Ω on-resistance at 0.5 A provides efficient conduction for low-power switching tasks. Verify that the 20 V voltage rating aligns with the system's supply rails and that the thermal management strategy accommodates the 0.25 W power dissipation limit.
Part Context
This component belongs to the family of small-signal MOSFETs intended for high-frequency switching environments. It serves as a replacement or alternative in designs requiring compact surface-mount solutions for power control. The integration of a built-in diode simplifies circuit topology by eliminating the need for external freewheeling components in specific configurations.
