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Product Detailed Parameters
- Description：2SJ529L06 - P-CHANNEL POWER MOSF
- Series：-
- Mfr：Renesas
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：160mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：580 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：20W (Tc)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：DPAK(L)-(2)
- Package / Case：TO-251-3 Long Leads, IPak, TO-251AB
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Overview
The Renesas 2SJ529L06-E is a P-Channel Power MOSFET designed for general-purpose switching applications. It features a drain-source voltage rating of 60V and a continuous drain current capacity of 10A at ambient temperature. The device is housed in a DPAK(L)-(2) through-hole package, offering thermal dissipation capabilities of 20W at case temperature. This component integrates high-speed switching performance with robust reliability standards suitable for various electronic circuits requiring efficient power management.
Feature Summary
- P-Channel configuration for complementary switching designs
- Through-hole mounting for mechanical stability
- High current handling capability for power loads
Applications
- General-purpose power switching circuits
- Complementary driver stages
- Load control modules
Procurement Notes
Verify the exact datasheet revision and manufacturer documentation to confirm electrical characteristics and pinout compatibility before integration. Ensure that the procurement source provides authentic components from Renesas Electronics Corporation to guarantee performance reliability and adherence to specified ratings.
Selection Notes
Select this component when a P-Channel MOSFET with 60V breakdown and 10A current capacity is required in a through-hole package. Consider the thermal requirements and ensure adequate heat sinking if operating near the maximum case temperature limit of 20W.
Part Context
This part belongs to the Renesas single FET and MOSFET product line. It serves as a discrete power semiconductor device intended for use in consumer electronics, industrial controls, and automotive systems where reliable P-Channel switching is necessary.
Replacement Considerations
Consult official substitution guides or equivalent part lists from Renesas for verified alternatives. Do not assume cross-compatibility with other manufacturers' parts without verifying pinout, voltage ratings, and thermal specifications.
