ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANSISTOR
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The Renesas 2SJ599 is a P-channel power MOSFET designed for solenoid, motor, and lamp driver applications. It features low on-state resistance of 75 mΩ maximum at VGS = –10 V and ID = –10 A, or 111 mΩ maximum at VGS = –4.0 V and ID = –10 A. The device supports a drain current of up to 20 A DC and handles pulse currents of 50 A. It operates with a Drain-Source Voltage (VDS) rating of –60 V and includes built-in gate protection diodes. Available in TO-251 and TO-252 packages, it offers low input capacitance of 1300 pF typical.
Feature Summary
- Low on-state resistance for efficient power switching
- Built-in gate protection diode for ESD safety
- Optimized for high-current solenoid and motor drivers
Applications
- Solenoid drivers
- Motor drivers
- Lamp drivers
Procurement Notes
Verify the specific package variant required: TO-251 (MP-3) corresponds to part number 2SJ599, while TO-252 (MP-3Z) corresponds to 2SJ599-Z. Confirm the quality grade intended for your application, as standard grades are designated for computers, office equipment, and industrial robots. Ensure compliance with export control laws if applicable.
Selection Notes
Select this component when designing circuits requiring robust P-channel switching for inductive loads like motors or solenoids. Consider the thermal dissipation capabilities, which drop significantly from 35 W at case temperature to 1.0 W at ambient temperature. Verify that the gate drive voltage meets the requirements for the desired on-state resistance level.
Part Context
Originally manufactured by NEC Electronics Corporation before its merger into Renesas Technology Corporation in April 2010, this component retains its original datasheet numbering. It belongs to the family of P-channel power MOSFETs utilized in general-purpose switching applications where moderate voltage ratings and high current handling are necessary.
Replacement Considerations
Check for pin-compatible alternatives within the same voltage and current class. Ensure any substitute maintains similar RDS(on) characteristics at the operating gate voltage and fits the TO-251 or TO-252 footprint without mechanical interference.
