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Product Detailed Parameters
- Description：TRANSISTOR
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SJ600 is a P-channel MOS Field Effect Transistor designed for solenoid, motor, and lamp driver applications. It features low on-state resistance of 50 mΩ maximum at VGS = –10 V and ID = –13 A, and 79 mΩ maximum at VGS = –4.0 V. The device has a drain-to-source voltage rating of –60 V and a continuous drain current capability of –25 A at 25°C case temperature. Input capacitance is typically 1900 pF. It includes a built-in gate protection diode and is available in TO-251 or TO-252 packages.
Feature Summary
- Low on-state resistance for efficient power switching
- Built-in gate protection diode for ESD safeguarding
- Designed specifically for solenoid, motor, and lamp driver applications
Applications
- Solenoid drivers
- Motor drivers
- Lamp drivers
Procurement Notes
Verify the specific package variant required (TO-251 MP-3 or TO-252 MP-3Z) as ordering suffixes determine physical form factor. Confirm quality grade classification matches application requirements before integration. Check latest Renesas Electronics documentation for any updates to absolute maximum ratings or thermal characteristics prior to final design approval.
Selection Notes
Select based on required gate drive voltage levels, noting distinct RDS(on) values for –10 V and –4.0 V logic levels. Ensure thermal management meets total power dissipation limits under operating conditions. Consider avalanche energy capabilities if inductive load switching is anticipated. Verify package compatibility with PCB layout constraints.
Part Context
This component belongs to the P-channel Power MOS FET category from Renesas Electronics (formerly NEC Electronics). It serves as a switching element in power electronics circuits. The datasheet indicates it was published in August 2006 by NEC Electronics Corporation, which merged into Renesas Electronics in April 2010.
Replacement Considerations
The 2SJ600-Z is the TO-252 package equivalent of the standard TO-251 2SJ600. No other cross-model substitutes are documented in the provided source material.
