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The onsemi 2SJ616-TD-E is a P-Channel MOSFET designed for power switching applications. It features a 30V voltage rating and supports continuous current capabilities up to 8A, with peak pulse current handling of 40A. The device utilizes an SOT-89 surface-mount package, offering a compact form factor suitable for space-constrained designs. It is part of the 2.5V Drive Series, enabling compatibility with low-voltage logic interfaces for efficient control in various electronic systems.
Verify the specific suffix TD-E against official onsemi documentation to confirm exact pinout and thermal specifications. Ensure the sourcing channel provides valid manufacturer traceability. Cross-reference the SOT-89 package dimensions with your PCB footprint requirements. Confirm that the 30V rating aligns with your system's maximum operating voltage constraints before finalizing procurement.
Select this component when a P-Channel solution is required for 30V applications with 2.5V logic compatibility. The SOT-89 package is ideal for designs prioritizing board space efficiency. Consider the 8A continuous current limit and 40A peak pulse capability when sizing thermal management solutions. Ensure the application does not exceed the specified voltage ratings for reliable long-term operation.
This device belongs to onsemi's specialized discrete power transistor portfolio, specifically within the P-Channel MOSFET category. It is engineered for general-purpose power switching tasks where low-side or high-side configuration flexibility is needed. The product line emphasizes reliability and performance for industrial and consumer electronics requiring robust semiconductor components.
The 2SJ618 is a documented alternative within the same series. Verify electrical parameters and pin compatibility before substitution.