2SJ624-T1B-AT

Description：MOSFET P-CH 20V SC-96 SOT-23
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)

SKU:e2bcce8c69c9 Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V SC-96 SOT-23
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：54mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：8.1 nC @ 4 V
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：813 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SC-96-3, Thin Mini Mold
Package / Case：SC-96

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2SJ624-T1B-AT

Overview

The 2SJ624 is a P-channel MOS field effect transistor designed for switching applications. It supports direct drive from a 1.8 V power source and features low on-state resistance with excellent switching characteristics. The device is suitable for use as a power switch in portable machines. Key electrical parameters include a drain-to-source voltage of -20 V, a DC drain current of -4.5 A, and an on-state resistance of 54 mΩ maximum at VGS = -4.5 V and ID = -2.5 A. It operates within a channel temperature range up to 150 °C.

Feature Summary

Supports direct driving from a 1.8 V power source
Features low on-state resistance for efficient switching
Includes an internal protection diode connected between the gate and source

Applications

Power switches for portable machines

Procurement Notes

Verify the specific quality grade required for your application before procurement. Renesas classifies products into Standard, High Quality, and Specific grades. Ensure the selected component matches the intended usage category. Contact a Renesas Electronics sales office to confirm the latest product information and availability status prior to purchasing or integrating the device into your design.

Selection Notes

Select this component based on its ability to operate directly from low-voltage sources like 1.8 V. Consider the thermal dissipation requirements, as total power dissipation depends on mounting conditions. Evaluate the on-state resistance values across different gate voltages to ensure compatibility with your control logic levels and load current demands.

Part Context

This component is a discrete semiconductor device manufactured by Renesas Electronics Corporation. It was originally developed by NEC Electronics Corporation before the merger in April 2010. The datasheet identifies it as a P-channel MOSFET intended for general switching purposes rather than linear amplification or high-frequency RF applications.