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Product Detailed Parameters
- Description：2SJ634 - PCH 4V DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The onsemi 2SJ634-TL-E is a P-channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed for low-voltage switching applications. It belongs to the 4V drive series, indicating compatibility with logic-level control signals. The device functions as a single discrete FET within power management and signal processing circuits.
Feature Summary
- P-channel conductivity type for high-side or complementary switching configurations
- Optimized for 4V gate drive operation to interface with standard logic levels
- Designed for reliable performance in electronic circuit switching and amplification tasks
Applications
- Power supply switching circuits
- Electronic circuit amplification stages
- Low-voltage logic level interfacing
Procurement Notes
Verify the specific suffix TL-E against the manufacturer's current datasheet to confirm pinout and electrical characteristics. Ensure the component meets RoHS compliance requirements if mandated by your assembly standards. Cross-reference the part number with official onsemi documentation to validate availability and manufacturing status before finalizing procurement plans.
Selection Notes
Select this component when a P-channel MOSFET compatible with 4V logic drives is required. Consider its suitability for low-voltage power management tasks where efficient switching is necessary. Evaluate the package type and thermal requirements against your system design constraints to ensure proper integration and performance reliability.
Part Context
This component falls under the onsemi Transistors - FETs, MOSFETs - Single category. It represents part of the company's broader portfolio of intelligent power and sensing technologies. The device supports various industrial and consumer electronics applications requiring robust semiconductor switching solutions.
Replacement Considerations
Consult official onsemi substitution guides for verified alternatives. Ensure any replacement matches the P-channel configuration and 4V drive voltage specifications. Verify package compatibility and electrical parameter alignment before implementing substitute components in existing designs.
