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Product Detailed Parameters
- Description：MOSFET P-CH
- Series：*
- Mfr：Sanyo
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The Sanyo 2SJ635-E is a P-Channel Silicon MOSFET designed for general-purpose switching applications. It features a Drain-Source Voltage (Vds) of -60 V and a continuous Drain Current (Id) of -12 A. The device exhibits a maximum On-State Resistance (Rds(on)) of 45 mΩ at a Gate-Source Voltage of -10 V. Power dissipation is rated at 30 W. The component is housed in a TO-251 package with three pins, ensuring efficient thermal management for surface-mount implementations.
Feature Summary
- P-Channel silicon construction for reliable switching performance
- Low on-state resistance to minimize conduction losses
- Robust power dissipation capability for high-current loads
- Surface-mount TO-251 package for compact integration
Applications
- General-purpose switching circuits
- Power management modules
- DC-DC converter stages
Procurement Notes
Verify the specific ordering suffix matches the required variant, as suffixes may indicate differences in packaging or tape-and-reel specifications. Confirm the manufacturer source is authorized to ensure component authenticity. Check that the datasheet parameters align with your circuit requirements before finalizing procurement decisions.
Selection Notes
Select this component when a P-Channel MOSFET with -60 V breakdown voltage and -12 A current capacity is required. Ensure the application operates within the 30 W power dissipation limit. Verify that the gate drive voltage can sufficiently overcome the threshold to achieve the specified low on-state resistance for optimal efficiency.
Part Context
This part belongs to the Sanyo P-Channel MOSFET family, specifically engineered for general-purpose switching tasks. It complements other devices in the series by offering a balance of voltage rating and current handling in a standard surface-mount footprint, suitable for various consumer and industrial electronic designs.
Replacement Considerations
Direct substitutes include the 2SJ635-TL-E, which shares similar electrical characteristics but may differ in packaging configuration. Verify pinout compatibility and thermal resistance values when cross-referencing alternative manufacturers' equivalents.
