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Product Detailed Parameters
- Description：MOSFET P-CH 60V 20A TO220ML
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：60mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：2200 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta), 25W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220ML
- Package / Case：TO-220-3 Full Pack
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Overview
The 2SJ651 is a P-channel power MOSFET manufactured by onsemi. It features a drain-source voltage (Vdss) of -60V and a continuous drain current (Id) of -30A at 25°C. The device has a maximum gate-source threshold voltage of -4V at -1mA. Its typical drain-source on-resistance (Rds(on)) is 18mΩ at -15V gate drive and -15A drain current. The component supports a maximum power dissipation of 275W at 25°C ambient temperature. It utilizes a TO-247 package for thermal management.
Feature Summary
- P-channel enhancement mode vertical power MOSFET structure
- Low on-resistance technology for high efficiency
- High avalanche energy capability
- Lead-free packaging compliant with RoHS standards
Applications
- DC-DC converters
- Motor control circuits
- Power supply output stages
Procurement Notes
Verify the specific suffix code to confirm lead-free status and tape-and-reel or tube packaging options. Confirm that the ordering part number matches the exact electrical characteristics required for the target application, as minor variations may exist between manufacturing revisions. Ensure compatibility with the intended thermal interface material for the TO-247 package.
Selection Notes
Select this component for applications requiring high current handling in P-channel configurations. Evaluate the thermal resistance requirements based on the expected power dissipation and ambient temperature conditions. Consider the gate charge specifications if switching frequency is a critical design parameter. Verify that the -60V rating provides sufficient margin for the system's maximum operating voltage.
Part Context
This component belongs to onsemi's family of discrete power MOSFETs designed for general-purpose power switching. It is part of the broader portfolio of N-channel and P-channel devices used in industrial and consumer electronics. The TO-247 package is standard for high-power through-hole applications requiring robust mechanical mounting and heat sinking capabilities.
Replacement Considerations
Check for direct cross-reference part numbers from onsemi or other manufacturers offering identical pinouts and electrical ratings. Verify that any substitute device meets the same Vdss, Id, and Rds(on) specifications. Ensure the replacement package type is compatible with the existing PCB footprint and thermal design constraints.
