2SJ656

$2.07

Description：MOSFET P-CH 100V 18A TO220ML
Series：-
Mfr：onsemi
Package：Bulk

SKU:71fc39f99f2b Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 100V 18A TO220ML
Series：-
Mfr：onsemi
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：75.5mOhm @ 9A, 10V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：74 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4200 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 30W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220ML
Package / Case：TO-220-3 Full Pack

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2SJ656

Overview

The 2SJ656 is a P-Channel Silicon MOSFET manufactured by SANYO Electric Co., Ltd. It features a TO-220ML package with Drain-to-Source Voltage (VDSS) of -100 V and continuous Drain Current (ID) of -18 A. The device exhibits low ON-resistance, with RDS(on) typically 75.5 mΩ at VGS=-10V and 104 mΩ at VGS=-4V. Key electrical parameters include Total Gate Charge (Qg) of 74 nC, Turn-ON Delay Time of 30 ns, Rise Time of 110 ns, Turn-OFF Delay Time of 340 ns, and Fall Time of 128 ns. Allowable Power Dissipation is rated at 30 W at Tc=25°C.

Feature Summary

Ultrahigh-speed switching capability for efficient power conversion
Low ON-resistance to minimize conduction losses
Optimized for 4V drive applications

Applications

Motor drive circuits
DC / DC converter designs

Procurement Notes

Verify the manufacturer origin carefully, as the datasheet identifies SANYO Electric Co., Ltd. while the prompt specifies onsemi. Confirm current availability status, as older component series may be discontinued or subject to obsolescence notices. Ensure the specific ordering number ENN7684 matches your supply chain requirements before finalizing procurement plans.

Selection Notes

Select this component for applications requiring fast switching speeds and low conduction losses in P-Channel configurations. Consider the thermal management requirements given the 30 W power dissipation rating at case temperature. Verify that the gate drive voltage levels align with the specified -4V and -10V operating conditions for optimal performance.

Part Context

This component belongs to the general-purpose switching device category within the SANYO Electric portfolio. It is designed as a standalone power transistor suitable for medium-power switching applications. The TO-220ML package provides a balance between thermal performance and mounting flexibility for industrial and consumer electronics.

Replacement Considerations

Consult official substitution lists from SANYO Electric or authorized distributors for verified equivalent parts. Cross-reference pinouts, voltage ratings, and thermal characteristics when considering alternative manufacturers.