ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：2SJ670 - P-CHANNEL SILICON MOSFE
- Series：*
- Mfr：Sanyo
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The Sanyo 2SJ670-TD-E is a P-Channel Silicon MOSFET designed for general-purpose switching applications. It features a maximum drain-source voltage of 100V and a continuous drain current of 1.5A. The device exhibits a maximum on-state resistance of 0.745 ohms at room temperature, ensuring efficient power handling in single-element configurations. Packaged in a small outline format with three pins, it supports an operating temperature up to 150°C and includes a built-in diode within its enhancement mode structure.
Feature Summary
- P-Channel silicon construction for general-purpose switching
- Built-in diode configuration within the single element
- Enhancement mode operation for standard control interfaces
Applications
- General-purpose switching circuits
- Power management modules requiring P-channel isolation
- Low-side or high-side load switching applications
Procurement Notes
Verify the specific ordering suffix (TD-E) against the manufacturer's latest datasheet to confirm pinout compatibility and package dimensions. Ensure that the thermal requirements align with the specified maximum junction temperature. Cross-reference the part number with authorized distributors to confirm authenticity and traceability, as generic listings may not reflect the exact manufacturing batch or revision level required for critical designs.
Selection Notes
Select this component when a P-channel MOSFET with moderate current capacity and low on-resistance is required for switching duties. Consider the 100V breakdown voltage and 1.5A current rating to ensure adequate headroom for the intended load. Evaluate the thermal performance relative to the expected duty cycle and ambient conditions to maintain operation within the specified temperature limits without excessive heatsinking.
Part Context
This component belongs to the Sanyo discrete semiconductor transistor family, specifically categorized as a Power Field-Effect Transistor. It utilizes metal-oxide semiconductor technology to provide reliable switching capabilities. The device is engineered for robust performance in electronic systems where efficient power control and compact packaging are necessary for integration into various circuit boards.
Replacement Considerations
Consult official substitution guides for equivalent P-channel MOSFETs with matching voltage and current ratings. Verify that any alternative part maintains compatible pin assignments and thermal characteristics to ensure seamless integration without redesigning the surrounding circuitry.
