2SK1070PICTL-E

Description：JFET N-CH 22V 50MA 3MPAK
Series：-

SKU:bd61c678152f Category: JFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：JFET N-CH 22V 50MA 3MPAK
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)
FET Type：N-Channel
Voltage - Breakdown (V(BR)GSS)：22 V
Drain to Source Voltage (Vdss)：-
Current - Drain (Idss) @ Vds (Vgs=0)：12 mA @ 5 V
Current Drain (Id) - Max：50 mA
Voltage - Cutoff (VGS off) @ Id：0 V @ 10 µA
Input Capacitance (Ciss) (Max) @ Vds：9pF @ 5V
Resistance - RDS(On)：-
Power - Max：150 mW
Operating Temperature：150°C
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：3-MPAK
Grade：-
Qualification：-

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2SK1070PICTL-E

Overview

The 2SK1070PICTL-E is a silicon N-channel Junction FET from Renesas Electronics Corporation, packaged in the MPAK (PLSP0003ZB-A) format. It features a maximum drain current of 50 mA and a channel power dissipation of 150 mW at 25°C ambient temperature. The device supports gate-to-drain and gate-to-source voltages up to -22 V. Electrical characteristics include a typical forward transfer admittance of 30 mS at 1 kHz and an input capacitance of 9 pF at 1 MHz. The component is supplied in a 3000-unit emboss taping reel.

Feature Summary

Designed for low frequency and high frequency amplifier applications
Features a compact MPAK package with defined pinout for Drain, Source, and Gate
Includes specific grading based on Drain Current (IDSS) ranges

Applications

Low frequency amplification circuits
High frequency amplification circuits

Procurement Notes

Verify the specific IDSS grade required for your design, as the product is grouped into Grades C, D, and E based on drain current ranges. Confirm production status directly with Renesas sales offices before ordering, as availability may vary by grade. Ensure the selected part number suffix matches the desired packaging quantity and tape configuration.

Selection Notes

Select the appropriate grade based on the required drain current range: Grade C (12-22 mA), Grade D (18-30 mA), or Grade E (27-40 mA). Consider the operating frequency when evaluating forward transfer admittance and capacitance parameters. Verify that the circuit voltage does not exceed the -22 V gate-to-source or gate-to-drain breakdown limits.

Part Context

This component belongs to the 2SK1070 series of silicon N-channel JFETs manufactured by Renesas Electronics. The PI suffix indicates the specific IDSS grade, while the CTL-H designation refers to the shipping container type. The datasheet revision R07DS0282EJ0400 Rev.4.00 provides the definitive technical specifications for this device family.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Renesas technical support for potential cross-references or migration paths if this component is no longer in production.