2SK1094-E

$2.26

Description：N-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk

SKU:d99272075697 Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：N-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SK1094-E

Overview

The 2SK1094-E is an N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features low on-resistance and high-speed switching capabilities, designed for efficient power management in electronic circuits. The device supports a 4 V gate drive, allowing it to be driven directly from a 5 V source, which simplifies interface requirements with logic-level control signals.

Feature Summary

Low on-resistance for improved efficiency
High-speed switching performance
Compatible with 5 V logic drive sources

Applications

Motor drive systems
Industrial automation power modules
Process automation equipment

Procurement Notes

Verify the manufacturer origin carefully, as the component history involves Hitachi Semiconductor before the Renesas merger. Ensure the datasheet corresponds to the specific -E suffix variant if critical specifications differ from the base 2SK1094 model. Confirm package type and pinout compatibility with your PCB design prior to ordering.

Selection Notes

Select this component for applications requiring reliable N-channel switching with low drive current requirements. Its ability to operate with a 4 V gate threshold makes it suitable for systems powered by standard 5 V logic supplies. Consider its thermal characteristics and on-resistance values relative to your specific load current and heat dissipation constraints.

Part Context

This part belongs to the broader family of power MOSFETs originally developed by Hitachi Semiconductor, now managed under Renesas Electronics following corporate integration. These devices are commonly utilized in industrial and consumer electronics where robust power switching and efficient energy conversion are required.

Replacement Considerations

Check for direct equivalents such as the base 2SK1094 model, ensuring functional compatibility regarding voltage ratings and package dimensions before substitution.