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Product Detailed Parameters
- Description：NCH POWER MOSFET 450V 1.5A 5500M
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：450 V
- Current - Continuous Drain (Id) @ 25°C：1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：5.5Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：160 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：20W (Ta)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The 2SK1151STR-E is a single N-channel silicon power MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain-source breakdown voltage of 450 V and a continuous drain current rating of 1.5 A. The device exhibits a maximum on-resistance of 5.5 Ω. Packaged in the DPAK(S) or TO-252 form factor, it is designed for surface-mount applications. The component operates in enhancement mode and utilizes metal-oxide semiconductor technology.
Feature Summary
- High-speed switching capability with low drive current requirements
- Absence of secondary breakdown effects for enhanced reliability
- Low on-resistance characteristics optimized for efficiency
Applications
- Switching regulators
- DC-DC converters
- Industrial equipment power stages
- Consumer use power management circuits
Procurement Notes
Verify the specific ordering suffix to confirm package type and tape-and-reel configuration. Ensure compatibility with RoHS standards if required by the target application. Confirm lead-free status and moisture sensitivity level prior to assembly. Cross-reference the manufacturer part number with official Renesas documentation to avoid counterfeit components.
Selection Notes
Select this component for high-voltage switching applications requiring moderate current handling. The 450V rating suits isolated power supplies. Evaluate thermal performance based on the 5.5Ω resistance and expected load currents. Consider the DPAK(S) package for PCB space constraints while ensuring adequate heatsinking for power dissipation limits.
Part Context
This part belongs to the Renesas 2SK series of N-channel power MOSFETs. It shares functional similarities with the 2SK1151S variant but includes specific packaging and reel specifications indicated by the STR-E suffix. The series is engineered for general-purpose power switching in compact electronic designs.
Replacement Considerations
The 2SK1151S is a related variant within the same product family. Verify pinout compatibility and electrical parameter equivalence before substitution. Ensure the replacement matches the required package style and mounting configuration.
