2SK1160-E

2SK1160-E

$2.46
  • Description:N-CHANNEL POWER MOSFET
  • Series:*
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk

SKU:6967ee013d28 Category: Brand:

  
  • Quantity
    • -
    • +
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Product Detailed Parameters

  • Description:N-CHANNEL POWER MOSFET
  • Series:*
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

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2SK1160-E

Overview

The 2SK1160-E is an N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a silicon construction with three leads and is supplied in tube packaging. The device is lead-free compliant. Key electrical characteristics include a typical input capacitance (Ciss) of 1150 pF. It is designed for industrial and consumer applications.

Feature Summary

  • N-channel power MOSFET configuration
  • Silicon semiconductor construction
  • Lead-free compliance

Applications

  • Industrial equipment
  • Consumer electronics

Procurement Notes

Verify the specific datasheet version, as Renesas products may have quality grades specified as Standard unless otherwise noted. Confirm package type and pinout compatibility during integration. Ensure ordering suffixes match required specifications. Cross-reference with official Renesas documentation to validate current availability and manufacturing status before finalizing procurement plans.

Selection Notes

Select this component based on its N-channel topology and 500V rating suitability for power switching tasks. Consider the 8A current capability and 1150 pF input capacitance for drive circuit design. Evaluate thermal management requirements for the intended application environment. Verify that the standard quality grade meets project reliability standards.

Part Context

This part belongs to the Renesas power MOSFET family, originally developed under Hitachi Semiconductor before corporate transitions. It serves as a discrete power switch solution. The -E suffix typically indicates environmental compliance or specific manufacturing lot variations within the Renesas portfolio.

Replacement Considerations

Equivalent parts include the generic 2SK1160 designation. Verify pinout and electrical parameters against original Hitachi Semiconductor datasheets when sourcing alternatives from other manufacturers to ensure functional compatibility.

2SK1160-E2SK1160-E
$2.46
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