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The 2SK1160-E is an N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a silicon construction with three leads and is supplied in tube packaging. The device is lead-free compliant. Key electrical characteristics include a typical input capacitance (Ciss) of 1150 pF. It is designed for industrial and consumer applications.
Verify the specific datasheet version, as Renesas products may have quality grades specified as Standard unless otherwise noted. Confirm package type and pinout compatibility during integration. Ensure ordering suffixes match required specifications. Cross-reference with official Renesas documentation to validate current availability and manufacturing status before finalizing procurement plans.
Select this component based on its N-channel topology and 500V rating suitability for power switching tasks. Consider the 8A current capability and 1150 pF input capacitance for drive circuit design. Evaluate thermal management requirements for the intended application environment. Verify that the standard quality grade meets project reliability standards.
This part belongs to the Renesas power MOSFET family, originally developed under Hitachi Semiconductor before corporate transitions. It serves as a discrete power switch solution. The -E suffix typically indicates environmental compliance or specific manufacturing lot variations within the Renesas portfolio.
Equivalent parts include the generic 2SK1160 designation. Verify pinout and electrical parameters against original Hitachi Semiconductor datasheets when sourcing alternatives from other manufacturers to ensure functional compatibility.