2SK1165-E

$2.66

Description：N-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk

SKU:b2a5883666eb Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：N-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SK1165-E

Overview

The 2SK1165-E is a silicon N-channel power MOSFET manufactured by Renesas Electronics Corporation. It is housed in a TO-3P package and designed for industrial applications. The device features a maximum drain-source voltage of 450V and a continuous drain current of 12A. Typical on-resistance (RDS(on)) is 400mΩ at 8V gate drive, with a maximum of 550mΩ at 10V. The component has a typical input capacitance (Ciss) of 1450pF and is lead-free.

Feature Summary

N-channel silicon construction
Industrial qualification level
Lead-free composition

Applications

Industrial equipment
Consumer use devices

Procurement Notes

Verify the specific suffix '-E' against official Renesas documentation to confirm lead-free status and RoHS compliance details. Confirm that the TO-3P package type matches your thermal management requirements. Check for any obsolete status notifications from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component when a robust N-channel MOSFET with 450V blocking capability is required for industrial environments. Ensure the gate drive voltage aligns with the specified RDS(on) conditions. Consider the TO-3P package size for mounting constraints and thermal dissipation needs in the target application design.

Part Context

This part belongs to Renesas's portfolio of discrete power semiconductors. It serves as a standard solution for switching applications requiring moderate current handling and high voltage tolerance. The TO-3P package provides a reliable mechanical interface for through-hole mounting in various electronic assemblies.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Renesas resources or authorized distributors for verified equivalents if this specific model is unavailable.