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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK1315L-E is an N-channel power MOSFET manufactured by Renesas Electronics. It features a drain-source breakdown voltage of 1500 V and a continuous drain current of 7 A. The device has a maximum on-resistance of 12 ohms and a gate threshold voltage of 4 V. It operates within a temperature range of -55 °C to +150 °C with a power dissipation of 100 W. The component utilizes silicon technology and is housed in a TO-3P package.
Feature Summary
- High-voltage capability for robust switching applications
- Enhanced mode operation for efficient control
- Through-hole mounting for secure mechanical attachment
Applications
- Motor inverter control systems
- Industrial power supplies
- High-voltage switching circuits
Procurement Notes
Verify the specific suffix 'L' against official Renesas documentation, as standard listings often reference the 2SK1317-E variant. Confirm end-of-life status and obsolescence notices directly from the manufacturer before procurement planning. Ensure compatibility with existing thermal management solutions given the 100 W dissipation rating.
Selection Notes
Select this component for designs requiring high voltage isolation and moderate current handling in through-hole configurations. Compare the 12 ohm on-resistance against system efficiency requirements. Verify that the TO-3P package dimensions fit the target PCB layout and that the 1500 V rating exceeds the peak operating voltage with adequate safety margin.
Part Context
This part belongs to the Renesas 2SK1317 series of high-voltage power MOSFETs. These devices are designed for demanding industrial applications where reliability under high stress conditions is critical. The series typically supports motor control and inverter technologies common in automation equipment.
Replacement Considerations
Consult official Renesas migration guides for direct substitutes. Cross-reference pinouts and electrical parameters with equivalent high-voltage MOSFETs if sourcing is restricted due to obsolescence.
