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The 2SK1318-90-E is an N-channel power MOSFET manufactured by Renesas Electronics Corporation. It is rated for a drain-source voltage of 120 V and a continuous drain current of 20 A. The device features low on-resistance and high-speed switching capabilities, designed to operate with a gate drive voltage as low as 4 V, allowing it to be driven from a 5 V source. This component is suitable for motor drive applications.
Verify the specific suffix -90-E against the official Renesas datasheet to confirm packaging and compliance details. Ensure the component matches the required 120 V and 20 A ratings for your circuit design. Check for RoHS compliance status in the latest documentation before procurement.
Select this component when a 120 V, 20 A N-channel MOSFET is required for motor control circuits. Its ability to operate with a 4 V gate drive makes it compatible with standard 5 V logic sources. Consider its low on-resistance for efficiency in power management applications.
This part belongs to the discrete power semiconductor category, specifically single FETs and MOSFETs produced by Renesas Electronics Corporation. It is classified as an active product within their portfolio of analog and power devices.
Consult official Renesas documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' components without verifying electrical parameters and pin configurations.
The device can be driven from a 5 V source and is designed to operate with a gate drive voltage as low as 4 V.
Yes, the datasheet explicitly lists motor drive as a suitable application for this component.