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Product Detailed Parameters
- Description：MOSFET N-CH 900V 8A TO3P
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：900 V
- Current - Continuous Drain (Id) @ 25°C：8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.6Ohm @ 4A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1730 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：100W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3P
- Package / Case：TO-3P-3, SC-65-3
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Overview
The 2SK1342-E is an N-channel single power MOSFET manufactured by Renesas Electronics Corporation. It features a drain-source voltage rating of 900V and a continuous drain current of 6A. The device exhibits a maximum on-resistance of 3000 mΩ. It is housed in a TO-3P package with three leads. The component supports a junction temperature up to 150°C and offers a maximum power dissipation of 100W when case-mounted.
Feature Summary
- Low on-resistance for efficient conduction
- High-speed switching capability
- Low drive current requirements
- No secondary breakdown
Applications
- Switching regulators
- DC-DC converters
- Industrial equipment
- Consumer use applications
Procurement Notes
Verify the obsolete status of this part number before procurement planning, as it is no longer manufactured by Renesas Electronics. Confirm availability through authorized distributors or substitute options. Ensure that any replacement components meet the original electrical specifications, including the 900V rating and TO-3P package dimensions, to maintain system integrity and safety compliance in existing designs.
Selection Notes
Select this component for high-voltage applications requiring robust N-channel performance. The 900V rating suits industrial and consumer power supplies. Consider the TO-3P package for thermal management needs. Evaluate the 3000 mΩ on-resistance against efficiency requirements. Verify compatibility with control circuitry due to low drive current characteristics. Assess thermal constraints given the 100W dissipation limit.
Part Context
This component belongs to the Renesas Electronics single FETs and MOSFETs product line. It is categorized under semiconductors and transistors. The specific subcategory is FETs, MOSFETs - Single. The manufacturer identifies the quality grade as Standard unless otherwise specified in official documentation. This classification places it within general-purpose power switching devices.
Replacement Considerations
Public confirmed substitute part numbers are not provided in the available source data. Users must consult official Renesas channels or authorized distributors for valid alternatives. Do not assume generic substitutes match the 900V/6A/TO-3P specifications without explicit verification from the manufacturer.
